Optical and electronic energy band properties of nb-doped β-ga2o3 crystals
Systemic investigations are performed to comprehend the structural, optical, and electrical characteristics of four niobium (Nb) doped β-Ga2O3 crystals (β-Ga2O3:Nb) grown by the optical floating zone (OFZ) method. All of the β-Ga2O3:Nb crystals revealed monoclinic phases and good crystalline qualities. While the different Nb doped (i.e., 0.0001 mol%, 0.01 mol%, 0.1 mol% and 0.5 mol%) samples exhibited slightly changed bandgap energies Eg (≡ 4.72 eV, 4.73 eV, 4.81 eV, 4.68 eV)—the luminescence features indicated distinctive defect levels—affecting the electronic energy structure significantly. By increasing the Nb doping level from 0.0001 mol% to 0.1 mol%, the Fermi level (EF) moves closer to the bottom of the conduction band. For the sample with Nb doping 0.5 mol%—no further improvement is noticed in the electronic properties. Finally, the energy band diagrams of four samples are given.
Digital Object Identifier (DOI)
Long, Xianjian, Wenlong Niu, Lingyu Wan, Xian Chen, Huiyuan Cui, Qinglin Sai, Changtai Xia, Devki N. Talwar, and Zhechuan Feng. 2021. "Optical and Electronic Energy Band Properties of Nb-Doped β-Ga2O3 Crystals" Crystals 11, no. 2: 135. https://doi.org/10.3390/cryst11020135