DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Authors

Qi Cheng, University of Delaware
Kazy Shariar, University of Delaware
Sourabh Khandelwal, University of North Florida
Yuping Zeng, University of Delaware

Document Type

Article

Publication Date

8-1-2019

Abstract

This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.

Publication Title

Solid-State Electronics

Volume

158

First Page

11

Last Page

15

Digital Object Identifier (DOI)

10.1016/j.sse.2019.05.001

ISSN

00381101

Citation Information

Cheng, Q., Shariar, K., Khandelwal, S., Zeng, Y. (2019) DC and RF Performances of InAs FinFET and GAA MO SFET on Insulator. Solid-State Electronics, 158, 11-15.