DC and RF performances of InAs FinFET and GAA MOSFET on insulator
Document Type
Article
Publication Date
8-1-2019
Abstract
This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.
Publication Title
Solid-State Electronics
Volume
158
First Page
11
Last Page
15
Digital Object Identifier (DOI)
10.1016/j.sse.2019.05.001
ISSN
00381101
Citation Information
Cheng, Q., Shariar, K., Khandelwal, S., Zeng, Y. (2019) DC and RF Performances of InAs FinFET and GAA MO SFET on Insulator. Solid-State Electronics, 158, 11-15.