Title

DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Document Type

Article

Publication Date

8-1-2019

Subject Area

ARRAY(0x55b6a92ef740)

Abstract

This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.

Publication Title

Solid-State Electronics

Volume

158

First Page

11

Last Page

15

Digital Object Identifier (DOI)

10.1016/j.sse.2019.05.001

ISSN

00381101

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