DC and RF performances of InAs FinFET and GAA MOSFET on insulator
This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.
Digital Object Identifier (DOI)
Cheng, Q., Shariar, K., Khandelwal, S., Zeng, Y. (2019) DC and RF Performances of InAs FinFET and GAA MO SFET on Insulator. Solid-State Electronics, 158, 11-15.